Color electroluminescence display device

ABSTRACT

An electroluminescence display device is provided in which a plurality of pixels are arranged in row and column directions, including: a gate line extending in the row direction; a first thin film transistor whose gate is connected to the gate line; a drain line extending in the column direction; a capacitor connected to the drain line via the first thin film transistor; a second thin film transistor whose control electrode is connected to the capacitor; and an EL element connected to a supply line via the second thin film transistor and having a luminescent layer between an anode and a cathode. The first thin film transistor is disposed in a region between the gate line and the capacitor.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a division of U.S. patent application Ser. No.10/132,546, filed Apr. 25, 2002 now U.S. Pat. No. 6,690,118, the entirecontents of which are incorporated herein by reference, which is acontinuation of U.S. patent application Ser. No. 09/451,453, filed Nov.30, 1999 now U.S. Pat. No. 6,429,599, the entire contents of which areincorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an active type color EL(electroluminescence) display device in which an electroluminescence(EL) element is driven using a thin film transistor (TFT).

2. Description of Related Art

Practical use of organic EL elements in next generation display devicesis greatly expected, because such displays can eliminate need for a backlight as required in a liquid crystal display device for self-emission,can be optimally made thin, and can have an unlimited viewing angle.

Three methods have commonly been proposed for achieving color display ina display device comprising such an organic EL element.

In the first method, different emissive materials for each of theprimary RGB colors are used in corresponding emissive layers toindividually form discrete color pixels directly emitting respective RGBlight rays. In another method, an emissive layer generates whiteluminescence which is then converted into three primary colors usingcolor filters. A third method is based on conversion of light from ablue emissive layer into three primary colors using color conversionmediums (CCM). As light energy is lost in the second and third methodsabove due to the use of color filters or color conversion mediums, thefirst method is the most effective of these in this respect because adesired light ray is directly emitted.

Meanwhile, to drive an organic EL display device, two types of drivingmethods, a passive type using a passive matrix and an active typeemploying TFTS, are available. The circuit configuration shown in FIG. 1may be used in an active display.

FIG. 1 illustrates a circuit configuration for a single pixel in such adisplay pixel. Each pixel comprises an organic EL element 20, a firstTFT 21 for switching, in which a display signal DATA is applied to adrain and a scan signal SCAN is applied to a gate to switch the TFT onand off, a capacitor 22 which is charged by a display signal DATAapplied when the TFT 21 is on and which holds a charge voltage Vh whenthe TFT 21 is off, a second TFT 23 in which a drain is connected to adrive source of a voltage V_(COM), a source is connected to an anode ofthe organic EL element 20 and a hold voltage Vh is applied to a gatefrom the capacitor 22 to drive the organic EL element 20.

A scan signal SCAN rises to an H level during one horizontal scanningperiod (1H). When the TFT 21 is switched on, a display signal DATA isapplied to one end of the capacitor 22, which is then charged by avoltage Vh corresponding to the display signal DATA. This voltage Vhremains held in the capacitor 22 for one vertical scanning period (1V)even after the signal SCAN becomes a low level to switch the TFT 21 off.Because the voltage Vh is supplied to the gate of the TFT 23, the ELelement is controlled so as to emit light with a luminance in accordancewith the voltage Vh.

The conventional configuration of such an active type EL display devicefor achieving color display by means of the above-mentioned first methodwill be now described.

FIG. 2 depicts a conceptual plan view showing a configuration of arelated art device, and FIG. 3 is a cross section taken along lineIII-III in FIG. 2. Each of the drawings depicts three pixels.

In FIGS. 2 and 3, numeral 50 represents a drain line for supplying adisplay signal DATA, numeral 51 represents a drive source line forsupplying a supply voltage V_(COM), and numeral 52 represents a gateline for supplying a scan signal SCAN. Further, numerals 53, 54, and 55designate features corresponding the first TFT 21, the capacitor 22, andthe second TFT 23 in FIG. 1, respectively, and numeral 56 designates ananode of the EL element 20 which constitutes a pixel electrode. Asshown, discrete anodes 56 are separately formed for each pixel on aplanarization insulating film 60. A hole-transport layer 61, an emissivelayer 62, an electron-transport layer 63, and a cathode 64 aresequentially laminated on the discrete anode 56, thereby forming an ELelement. Holes injected from the anodes 56 and electrons injected fromthe cathodes 64 are recombined inside the emissive layer 62, which emitslight in the direction of the transparent anodes toward outside, asshown by arrows in FIG. 3. Here, discrete hole-transport layers 61,discrete emissive layers 62 and discrete electron-transport layers 63having substantially the same shape as the discrete anodes 56 areprovided for respective pixels. Emissive materials which are differentfor each RGB are used in the corresponding emissive layers 62, andtherefore light rays having respective RGB colors are emitted fromrespective EL elements. The cathode 64, which applies a common voltageto each pixel, extends over the pixels. Partitions 68 are interposedbetween adjoining emissive layers 62. Further, numerals 65, 66, and 67designate a transparent glass substrate, a gate insulating film, and aninterlayer insulating film, respectively.

However, the arrangement of the first TFT 53, the capacitor 54, thesecond TFT 55, and the anode 56 of the related examples do not takesufficient consideration of integration efficiency and therefore a morehighly-integrated configuration is in demand.

Further, the color display device generally adopts a stripe arrangementas shown in FIG. 4A or a delta arrangement as shown in FIG. 4C as anarrangement for three primary colors of RGB. At the same time, it isnecessary to use different luminescent materials for each of RGB suchthat discrete EL elements can directly emit light rays of respective RGBcolors. Therefore, if the stripe arrangement shown in FIG. 4A isadopted, for example, a metal mask 70 shown in FIG. 4B may be used toform the luminescent layers as follows. First, a luminescent layer for Ris formed by evaporating only an R color luminescent material onto thehole transport layer. Then, the metal mask 70 is displaced by a distancecorresponding to one pixel in the horizontal direction to form aluminescent layer for G by evaporating only a G color luminescentmaterials on the hole transport layer. Finally, the metal mask 70 isfurther displaced by one pixel in the horizontal direction to form aluminescent layer for B by evaporating only a B color luminescentmaterial. In the case of the delta arrangement shown in FIG. 4C, theluminescent layers can be similarly formed using the metal mask shown inFIG. 4D.

However, during the process for forming the luminescent layers byevaporating the luminescent materials, a so-called “diffusion”phenomenon is caused in which luminescent materials are deposited ontoregions other than the regions directly under the openings in the metalmasks 70 and 71. Because of such diffusion phenomenon or because ofimperfect construction of the metal mask itself, colors in adjoiningpixels are adversely mixed causing color purity to deteriorate.Particularly in delta arrangements, wherein adjoining pixels in thecolumn and row directions differ from one another, this disadvantage isfurther pronounced.

SUMMARY OF THE INVENTION

The present invention provides a color display device suitable for ahighly integrated configuration.

In accordance with one aspect of the present invention, a first thinfilm transistor is disposed in a region between a gate line and acapacitor, and a second thin film transistor is disposed in a regionbetween the capacitor and an EL element. This configuration allows thecapacitor, the first thin film transistor, and the second thin filmtransistors to be densely arranged, thereby facilitating formation of ahighly integrated configuration.

In accordance with another aspect of the present invention, said firstthin film transistor is connected to one end of one electrode of saidcapacitor while a gate of said second thin film transistor is connectedto the other end which is opposed to said one end of the capacitor.Thus, the first thin film transistor and the gate of the second thinfilm transistor are electrically connected via the one electrode of thecapacitor.

In accordance with still another aspect of the present invention, thecapacitor includes a dent region in which the first thin film transistoris disposed. Thus, an efficient arrangement can be achieved.

In accordance with still another aspect of the present invention, the ELelement includes a dent region in which the second thin film transistoris disposed. Thus, an efficient arrangement can be achieved.

In accordance with further aspect of the present invention, thecapacitor and the EL element are disposed so as to adjoin each other inthe column direction, such that space is provided in the verticaldirection. Therefore, when forming a pixel electrode (for example, ananode), color mixture among adjoining pixels can be prevented, whenmetal mask positioning accuracy is low, thereby maintaining preferablecolor purity for even highly detailed displays.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other objects of the invention will be explained in thedescription below, in connection with the accompanying drawings, inwhich:

FIG. 1 is a view showing a circuit configuration of an active type colorEL display device.

FIG. 2 is a plan view showing a configuration of a conventional color ELdisplay device;

FIG. 3 is cross section showing a configuration of a conventional colorEL display device;

FIGS. 4A, 4B, 4C and 4D are views for explaining color arrangements usedin a color EL display device;

FIG. 5 is a plan view illustrating a first embodiment of the presentinvention;

FIGS. 6A and 6B are cross sections illustrating the first embodiment ofthe present invention; and

FIG. 7 is a plan view illustrating a second embodiment of the presentinvention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 5 is a plan view showing a color EL display device in accordancewith a first embodiment of the present invention, and depicts theconfiguration corresponding to three pixels of RGB. Further, FIG. 6A isa cross section taken along a line I-I of FIG. 5, and FIG. 6B is a crosssection taken along a line II-II of FIG. 5. This embodiment exemplifiesa configuration for the stripe pixel arrangement shown in FIG. 4A.

A driving circuit for each pixel in this embodiment is the same as thatin FIG. 1, and the configuration of the device differs from the exampleshown in FIGS. 2 and 3 in the pattern arrangement and the cross section.

Referring to FIGS. 5, 6A and 6B, the device comprises a data line 1 madeof aluminum for supplying a display signal DATA, a power supply line 2made of aluminum for supplying a power from a drive source COM, and agate line made of chrome for supplying a scan signal SCAN. Each pixel ofthe EL display further comprises a first TFT 4 corresponding to thefirst TFT 21 in FIG. 1, a capacitor 5 corresponding to the capacitor 22in FIG. 1, a second TFT 6 corresponding to the second TFT 23 in FIG. 1,and an anode (a first electrode) 7 of the EL element 20 comprising ITOand constituting an pixel electrode. In FIG. 5, regions enclosed by dotlines are formed by chromium, regions enclosed by chain lines are formedby ITO, and regions enclosed by solid lines other than the data line 1and the power supply line 2 are formed using a polysilicon thin film.

The second TFT 6 is formed as follows. First, a gate electrode 9 isformed on a transparent glass substrate 8, and a gate insulating film 10is formed thereupon. Then, a polysilicon thin film 11 formed on the gateinsulating film 10 is covered with an interlayer insulating film 12, onwhich the data line 1 and the power supply line 2 are formed. Aplanarization insulating film 13 is further formed thereon and the anode7 comprising ITO is finally formed on the planarization insulating film13. Then, the drain region of the polysilicon thin film 11 is broughtinto contact with the power supply line 2 while the source region of thepolysilicon thin film 11 is brought into contact with the anode 7.

The configuration of the first TFT 4 is substantially the same as thatof the second TFT 6, with the notable exception that the drain region ofthe first TFT 4 is connected to the data line 1, and not to the powersupply line 2. Further, the capacitor 5 connected to the first TFT 4comprises a chromium electrode and a polysilicon thin film having a gateinsulating film interposed therebetween.

The discrete anodes 7 are formed on the planarization insulating film 13corresponding to respective pixels, and a hole-transport layer 14 isformed thereon so as to cover the entire pixels. Then, discrete emissivelayers 15 are formed for each pixel, on which an electron-transportlayer 16 and a cathode 17 are laminated in this order to completeformation of an EL element. Holes injected from the anode 7 andelectrons injected from the cathode 17 are recombined inside theemissive layer 15, which emits light in the direction of the transparentanode toward outside, as indicated by arrows in FIGS. 6A and 6B. Thediscrete emissive layers 15 are formed for respective pixels to havesubstantially the same shape as the discrete anodes 7, and differentemissive materials are used for each of the RGB colors. Thus, each ELelement emits one type of RGB light.

Materials of, for example, MTDATA, Alq₃, and MgIn alloy may be used forthe hole-transport layer 14, the electron-transport layer 16, and thecathode 17, respectively. Further, for example, Alq containing DCM typeas dopant is used for the emissive layer 15 for R, Alq containingquinacridon as dopant is used for the emissive layer 15 for G, and DPVBicontaining distyrylarylene or Perylene as dopant is used in the emissivelayer 15 for B.

In this embodiment, as in the first embodiment, the first TFT 4 isdisposed in a region between the gate line 3 and the capacitor 5, andthe capacitor 5 includes a dent region in which the first TFT 4 isdisposed. Further, the second TFT 6 is disposed in a region between thecapacitor 5 and the anode 7, and the anode 7 includes a dent region inwhich the second TFT 6 is disposed. In other words, the capacitor 5 isdisposed in a middle area between first TFT 4 and second TFT 6. Thecapacitor 5 also functions as a wiring for connecting the first TFT 4and the second TFT 6. Due to such configuration, it is possible todensely arrange the first TFT 4, the capacitor 5, the second TFT 6, andthe anode 7, thereby increasing the integration efficiency of pixels andachieving a highly detailed display.

FIG. 7 depicts, in plan view, the second embodiment of the presentinvention. In FIG. 7, the same elements as shown in FIGS. 1, 5 and 6 aredesignated by the same reference numerals, and the detailed descriptionthereof will be omitted. In FIG. 7, numeral 4 denotes a first TFTcorresponding to the first TFT 21 of FIG. 1, numeral 5 denotes acapacitor corresponding to the capacitor 22 of FIG. 1, numeral 6 denotesa second TFT corresponding to the second TFT 23 of FIG. 1 and numeral 7denotes an anode of the EL element 20 comprising ITO and constituting apixel electrode. This embodiment exemplifies a configuration in the caseof a delta pixel arrangement as shown in FIG. 4C.

In this embodiment, as in the first embodiment, the first TFT 4 isdisposed in a region between the gate line 3 and the capacitor 5, andthe capacitor 5 includes a dent region in which the first TFT 4 isdisposed. Further, the second TFT 6 is disposed in a region between thecapacitor 5 and the anode 7, and the anode 7 includes a dent region inwhich the second TFT 6 is disposed. The capacitor 5 also functions as awiring for connecting the first TFT 4 and the second TFT 6. Due to suchconfiguration, it is possible to densely arrange the first TFT 4, thecapacitor 5, the second TFT 6, and the anode 7, thereby increasing theintegration efficiency of pixels and achieving a highly detaileddisplay.

When a delta arrangement is used, pixels of different colors adjoin withone another in the column direction, as shown in FIG. 4C. In thisembodiment, however, because the first TFT 4 and the capacitor 5 aredisposed in the vertical direction of the anode 7 which is a pixelelectrode, gaps between the EL elements in the column direction can besufficiently secured. As described above, by forming the pixel electrode7 and the luminescent layer 15 with substantially the same shape, theluminescent region of a pixel and the pixel electrode itself also havesubstantially the same shape. When this is the case, if the dimensionsof the luminescent region in the horizontal and vertical directions areEH and EV, respectively, and that the dimensions of the pixel pitch inthe horizontal and vertical directions are PH and PV, respectively, therelationship EH/EV≧PH/PV will hold. Because of this configuration,capacity against diffusion of the luminescent materials is increased inthe vertical direction when forming the respective RGB luminescentlayers using the metal mask, thereby reducing a possibility of colormixture even if the luminescent layers are formed with a manufacturingaccuracy which is similar in the prior art.

In a typical delta arrangement, pixels of the same color which areadjacent in the column direction are displaced from each other in therow direction by a distance corresponding to about 1.5 pixels.Therefore, the arrangement including such an 1.5 pixel displacement ispreferably used in the present invention. However, the size of pixeldisplacement is not limited to 1.5 and the arrangement including an 1.2pixel displacement as shown in FIG. 7 may be used.

According to the present invention, since the first thin film transistoris disposed between the gate line and the capacitor and the second thinfilm transistor is disposed between the capacitor and the EL element, itis possible to densely arrange these features so as to achieve a highlyintegrated configuration.

Further, color mixture in adjoining pixels which causes deterioration ofcolor purity can be prevented in an active type color EL display device,thereby maintaining preferable color purity even in a highly detaileddisplay.

Specifically, by disposing at least part of a capacitor or a thin filmtransistor in the horizontal direction of the luminescent region of eachpixel, a room is provided in each pixel in the horizontal direction suchthat highly detailed display can be achieved even if accuracy in metalmask positioning is low.

Although the present invention is also applicable to a delta pixelarrangement, the above-mentioned effects especially work in a stripearrangement.

1. An electroluminescence display device in which a plurality of pixelsare arranged in row and column directions, comprising: a gate lineextending in the row direction; a first thin film transistor whose gateis connected to said gate line; a drain line extending in the columndirection; a capacitor connected to said drain line via said first thinfilm transistor; a second thin film transistor whose control electrodeis connected to said capacitor; and an EL element connected to a supplyline via said second thin film transistor and having a luminescent layerbetween an anode and a cathode, wherein said first thin film transistoris disposed in a region between said gate line and said capacitor,wherein said first and second thin film transistors are disposed onopposite sides with said capacitor in a middle area between said firstand second thin film transistors wherein said first thin film transistoris connected to one end of an electrode of said capacitor, and a gate ofsaid second thin film transistor is connected to the other end of saidelectrode of said capacitor.